研究方向：

先進CMOS器件與工藝

低功耗集成電路器件與系統

寬禁帶半導體材料與功率器件

智能傳感器件與系統設計

Research Interests：

Advanced CMOS device and process

Low-power semiconductor device and system

Wide bandgap semiconductors and power devices

Intelligent sensing device and system

學術經歷：

2023年--至今沐鸣，教授

2016年--2022年沐鸣，青年研究員

2011年-2016年美國國家標準與技術研究院（NIST），Guest Scientist

2013年美國George Mason University,  Ph.D. in Electrical Engineering

2010年南京大學，凝聚態物理，碩士

2007年南京大學👨，物理學🎭，學士

Recent Publications

Google Scholar with a full list of publications with citations

ŸX. Zhu, T. Zhang, Y. He, Y. Liu*, H. Zhu*, Carriertuning of 2D electron gas in field-effect devices based on Al₂O₃/ZnO heterostructures, Nanoscale 15, 12071 (2023).

ŸH. Xu, J. Wang, H. Xu, Y. Gu, H. Zhu*, Q. Sun, D. W. Zhang, Impact Study of Layout-Dependent Effects Toward FinFET Combinational Standard Cell Optimization, IEEE Transactions on Circuits and Systems – II: Express Briefs 70, 731 (2023).

ŸY. Yang, K. Zhang, Y. Gu, P. Raju, Q. Li*, L. Ji, L. Chen, D. E. Ioannou, Q. Sun, D. W. Zhang, H. Zhu*, Steep-Slope Negative Quantum Capacitance Field-Effect Transistor, IEEE 68^th International Electron Devices Meeting (IEDM 2022), pp. 22.6.1-pp.22.6.4

ŸX. Chao, C. Tang, C. Wang, J. Tan, L. Ji, L. Chen, H. Zhu*, Q. Sun, D. W. Zhang, Observation and Analysis of Anomalous V_TH Shift of p-GaN Gate HEMTs Under OFF-State Drain Stress, IEEE Transactions on Electron Devices 69, 6587 (2022).

ŸH. Xu, Y. Yang, J. Tan, L. Chen, H. Zhu*, Q. Sun, High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure, IEEE Electron Device Letters 43, 1077 (2022).

ŸB. Wang, H. Li, H. Tan, Y. Gu, L. Chen, L. Ji, Z. Sun, Q. Sun*, S. Ding, D. W. Zhang, H. Zhu*, Gate-Modulated High-Response Field-Effect Transistor-Type Gas Sensor Based on the MoS₂/Metal−Organic Framework Heterostructure, ACS Applied Materials & Interfaces 14, 42356 (2022).

ŸH. Xu, Y. Yang, J. Tan, H. Zhu*, Q.-Q. Sun, D. W. Zhang, Carrier Stored Trench-Gate Bipolar Transistor With Stepped Split Trench-Gate Structure, IEEE Transactions on Electron Devices 69, 5450 (2022).

ŸJ. Zhang, H. Zhu*, L. Chen, Q. Sun, D. W. Zhang, Mitigating the Length of Diffusion Effect by Back-End Design-Technology Cooptimization, IEEE Transactions on Electron Devices 69, 1279 (2022).

ŸB. Ye, Y. Gu, H. Xu, C. Tang, H. Zhu*, Q. Sun, D. W. Zhang, NBTI Mitigation by Optimized HKMG Thermal Processing in a FinFET Technology, IEEE Transactions on Electron Devices 69, 905 (2022).

ŸJ. Wang, H. Zhu, Y. Yu, X. Liu, E. Feng, C. Lei, Y. Cai, H. Zhu*, Q.-Q. Sun*, D. W. Zhang, A Transistor-Level DFF Based on FinFET Technology for Low Power Integrated Circuits, IEEE Transactions on Circuits and Systems – II: Express Briefs 69, 584 (2022).

ŸH. Zhu*, B. Ye, C. Tang, X. Li, Q. Sun*, D. W. Zhang, Improving Low-Frequency Noise in 14-nm FinFET by Optimized High-k/Metal Gate Thermal Processing, IEEE Electron Device Letters 42, 1112 (2021).